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    Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

    New search for: Sugimoto, Y.
    New search for: Adachi, H.
    New search for: Yamamoto, K.
    New search for: Wang, D.
    New search for: Nakashima, H.

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    Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

    New search for: Sugimoto, Y.
    New search for: Adachi, H.
    New search for: Yamamoto, K.
    New search for: Wang, D.
    New search for: Nakashima, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

    New search for: Sugimoto, Y.
    New search for: Adachi, H.
    New search for: Yamamoto, K.
    New search for: Wang, D.
    New search for: Nakashima, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

    Contributors:

    Sugimoto, Y. (author) / Adachi, H. (author) / Yamamoto, K. (author) / Wang, D. (author) / Nakashima, H. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 1031-1036

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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