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Alteration of gate oxides thickness for SOC level integration

Sharma, S. K. / Prasad, B. / Kumar, D. / Raj, k.

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Alteration of gate oxides thickness for SOC level integration

Sharma, S. K. / Prasad, B. / Kumar, D. / Raj, k.

Alteration of gate oxides thickness for SOC level integration

Sharma, S. K. / Prasad, B. / Kumar, D. / Raj, k.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Alteration of gate oxides thickness for SOC level integration

Contributors:

Sharma, S. K. (author) / Prasad, B. (author) / Kumar, D. (author) / Raj, k. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 12 ; 99-105

Publication date:

2009-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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