Gate-Area Dependence of SiC Thermal Oxides Reliability: Fid-Bau Portal

Gate-Area Dependence of SiC Thermal Oxides Reliability

Senzaki, J. / Shimozato, A. / Okamoto, M. / Kojima, K. / Fukuda, K. / Okumura, H. / Arai, K.

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Gate-Area Dependence of SiC Thermal Oxides Reliability

Senzaki, J. / Shimozato, A. / Okamoto, M. / Kojima, K. / Fukuda, K. / Okumura, H. / Arai, K.

Gate-Area Dependence of SiC Thermal Oxides Reliability

Senzaki, J. / Shimozato, A. / Okamoto, M. / Kojima, K. / Fukuda, K. / Okumura, H. / Arai, K.

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Document information

Title:

Gate-Area Dependence of SiC Thermal Oxides Reliability

Contributors:

Senzaki, J. (author) / Shimozato, A. (author) / Okamoto, M. (author) / Kojima, K. (author) / Fukuda, K. (author) / Okumura, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 787-790

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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