Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes: Fid-Bau Portal

Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

Uthirakumar, P. / Kang, J. H. / Ryu, B. D. / Kim, H. G. / Kim, H. K. / Hong, C. H.

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Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

Uthirakumar, P. / Kang, J. H. / Ryu, B. D. / Kim, H. G. / Kim, H. K. / Hong, C. H.

Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

Uthirakumar, P. / Kang, J. H. / Ryu, B. D. / Kim, H. G. / Kim, H. K. / Hong, C. H.

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Document information

Title:

Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

Contributors:

Uthirakumar, P. (author) / Kang, J. H. (author) / Ryu, B. D. (author) / Kim, H. G. (author) / Kim, H. K. (author) / Hong, C. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 166 ; 230-234

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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