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Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

Wang, Tian-Hu / Xu, Jin-Liang

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Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

Wang, Tian-Hu / Xu, Jin-Liang

Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

Wang, Tian-Hu / Xu, Jin-Liang

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

Contributors:

Wang, Tian-Hu (author) / Xu, Jin-Liang (author)

Published in:

Materials science in semiconductor processing ; 29 ; 95-101

Publication date:

2015-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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