Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers: Fid-Bau Portal

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Fujimoto, T. / Aigo, T. / Nakabayashi, M. / Satoh, S. / Katsuno, M. / Tsuge, H. / Yashiro, H. / Hirano, H. / Hoshino, T. / Ohashi, W.

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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Fujimoto, T. / Aigo, T. / Nakabayashi, M. / Satoh, S. / Katsuno, M. / Tsuge, H. / Yashiro, H. / Hirano, H. / Hoshino, T. / Ohashi, W.

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Fujimoto, T. / Aigo, T. / Nakabayashi, M. / Satoh, S. / Katsuno, M. / Tsuge, H. / Yashiro, H. / Hirano, H. / Hoshino, T. / Ohashi, W.

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Title:

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Contributors:

Fujimoto, T. (author) / Aigo, T. (author) / Nakabayashi, M. (author) / Satoh, S. (author) / Katsuno, M. (author) / Tsuge, H. (author) / Yashiro, H. (author) / Hirano, H. (author) / Hoshino, T. (author) / Ohashi, W. (author)

Published in:

Silicon Carbide and Related Materials 2009 ; 319-322

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping

Canino, A. / Camarda, M. / La Via, F. | British Library Online Contents | 2010

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers

Izumi, S. / Tsuchida, H. / Tawara, T. et al. | British Library Online Contents | 2005

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

Twigg, M. E. / Stahlbush, R. E. / Losee, P. A. et al. | British Library Online Contents | 2006