A platform for research: civil engineering, architecture and urbanism
Shallow Defects Observed in As-Grown and Electron-Irradiated or He^+-Implanted Al-Doped 4H-SiC Epilayers
Shallow Defects Observed in As-Grown and Electron-Irradiated or He^+-Implanted Al-Doped 4H-SiC Epilayers
Shallow Defects Observed in As-Grown and Electron-Irradiated or He^+-Implanted Al-Doped 4H-SiC Epilayers
Beljakowa, S. (author) / Reshanov, S.A. (author) / Zippelius, B. (author) / Krieger, M. (author) / Pensl, G. (author) / Danno, K. (author) / Kimoto, T. (author) / Onoda, S. (author) / Ohshima, T. (author) / Yan, F. (author)
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1993
|Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
British Library Online Contents | 2003
|Vacancy-related defects in ion implanted and electron irradiated silicon
British Library Online Contents | 2000
|Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
British Library Online Contents | 2003
|SIMS Studies of Cl-Doped ZnSe Epilayers Grown by MBE
British Library Online Contents | 2006
|