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Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
Kagei, Y. (author) / Kirino, T. (author) / Watanabe, Y. (author) / Mitani, S. (author) / Nakano, Y. (author) / Nakamura, T. (author) / Hosoi, T. (author) / Shimura, T. (author) / Watanabe, H. (author) / Bauer, A.J.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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