Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides: Fid-Bau Portal

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

Grieb, M. / Noborio, M. / Peters, D. / Bauer, A.J. / Friedrichs, P. / Kimoto, T. / Ryssel, H.

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Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

Grieb, M. / Noborio, M. / Peters, D. / Bauer, A.J. / Friedrichs, P. / Kimoto, T. / Ryssel, H.

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

Grieb, M. / Noborio, M. / Peters, D. / Bauer, A.J. / Friedrichs, P. / Kimoto, T. / Ryssel, H.

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Title:

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

Contributors:

Grieb, M. (author) / Noborio, M. (author) / Peters, D. (author) / Bauer, A.J. (author) / Friedrichs, P. (author) / Kimoto, T. (author) / Ryssel, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

Published in:

Silicon Carbide and Related Materials 2009 ; 681-684

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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