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Impact of CF~4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
Impact of CF~4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
Impact of CF~4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
Sugimoto, T. (author) / Satoh, M. (author) / Nakamura, T. (author) / Mashimo, K. (author) / Doi, H. (author) / Shibagaki, M. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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