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Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
Kinoshita, A. (author) / Katou, M. (author) / Kawasaki, M. (author) / Kojima, K. (author) / Fukuda, K. (author) / Arai, K. (author) / Morigasa, F. (author) / Endou, T. (author) / Isii, T. (author) / Yashima, T. (author)
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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