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1360 V, 5.0 m Omega cm^2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
1360 V, 5.0 m Omega cm^2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
1360 V, 5.0 m Omega cm^2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
Kono, H. (author) / Suzuki, T. (author) / Mizukami, M. (author) / Ota, C. (author) / Harada, S. (author) / Senzaki, J. (author) / Fukuda, K. (author) / Shinohe, T. (author) / Bauer, A.J. / Friedrichs, P.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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