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    1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

    New search for: Kono, H.
    New search for: Suzuki, T.
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    1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

    New search for: Kono, H.
    New search for: Suzuki, T.
    New search for: Takao, K.
    New search for: Furukawa, M.
    New search for: Mizukami, M.
    New search for: Ota, C.
    New search for: Harada, S.
    New search for: Senzaki, J.
    New search for: Fukuda, K.
    New search for: Shinohe, T.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

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    1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

    New search for: Kono, H.
    New search for: Suzuki, T.
    New search for: Takao, K.
    New search for: Furukawa, M.
    New search for: Mizukami, M.
    New search for: Ota, C.
    New search for: Harada, S.
    New search for: Senzaki, J.
    New search for: Fukuda, K.
    New search for: Shinohe, T.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

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    Document information
    Title:

    1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

    Contributors:

    Kono, H. (author) / Suzuki, T. (author) / Takao, K. (author) / Furukawa, M. (author) / Mizukami, M. (author) / Ota, C. (author) / Harada, S. (author) / Senzaki, J. (author) / Fukuda, K. (author) / Shinohe, T. (author)

    Published in:

    Silicon Carbide and Related Materials 2010 ; 607-612

    MATERIALS SCIENCE FORUM ; 679/680

    Publication date:

    2011-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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