Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

    New search for: Masumoto, K.
    New search for: Kojima, K.
    New search for: Okumura, H.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

    New search for: Masumoto, K.
    New search for: Kojima, K.
    New search for: Okumura, H.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

    New search for: Masumoto, K.
    New search for: Kojima, K.
    New search for: Okumura, H.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

    Contributors:

    Masumoto, K. (author) / Kojima, K. (author) / Okumura, H. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

    Published in:

    Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 193-196

    MATERIALS SCIENCE FORUM ; 740/742

    Publication date:

    2013-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

    Harada, S. / Ito, S. / Kato, M. et al. | British Library Online Contents | 2010

    4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

    Kojima, K. / Ito, S. / Senzaki, J. et al. | British Library Online Contents | 2010

    Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

    Masumoto, K. / Ito, S. / Goto, H. et al. | British Library Online Contents | 2014

    Observation of Planar Defects in 2-inch SiC Wafer

    Tanaka, H. / Nishiguchi, T. / Sasaki, M. et al. | British Library Online Contents | 2002

    Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates

    Shen, X. Q. / Okumura, H. | British Library Online Contents | 2004

    Back to top