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Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
Tilak, V. (author) / Matocha, K. (author) / Dunne, G. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
Silicon Carbide and Related Materials 2009 ; 1005-1008
MATERIALS SCIENCE FORUM ; 645/648
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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