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    Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

    New search for: Rao, R.R.
    New search for: Matocha, K.
    New search for: Tilak, V.

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    Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

    New search for: Rao, R.R.
    New search for: Matocha, K.
    New search for: Tilak, V.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

    New search for: Rao, R.R.
    New search for: Matocha, K.
    New search for: Tilak, V.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

    Contributors:

    Rao, R.R. (author) / Matocha, K. (author) / Tilak, V. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 797-800

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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