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Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Naik, H. (author) / Chow, T.P. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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