A platform for research: civil engineering, architecture and urbanism
Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
Tajima, T. (author) / Nakamura, T. (author) / Watabe, Y. (author) / Satoh, M. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
Silicon Carbide and Related Materials 2009 ; 1065-1068
MATERIALS SCIENCE FORUM ; 645/648
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-frequency SiGe:C HBTs with elevated extrinsic base regions
British Library Online Contents | 2005
|Influence of the extrinsic base on the base current kink in SiGe BJTs
British Library Online Contents | 2004
|Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
British Library Online Contents | 2006
|Extrinsic Base Design of SiC Bipolar Transistors
British Library Online Contents | 2004
|Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing
British Library Online Contents | 2004
|