Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing: Fid-Bau Portal

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

Ortiz, C. J. / Cristiano, F. / Colombeau, B. / Claverie, A. / Cowern, N. E.

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Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

Ortiz, C. J. / Cristiano, F. / Colombeau, B. / Claverie, A. / Cowern, N. E.

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

Ortiz, C. J. / Cristiano, F. / Colombeau, B. / Claverie, A. / Cowern, N. E.

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Check availability in my library

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Document information

Title:

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

Contributors:

Ortiz, C. J. (author) / Cristiano, F. (author) / Colombeau, B. (author) / Claverie, A. (author) / Cowern, N. E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 184-192

Publication date:

2004-01-01

Size:

9 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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