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Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
Tanimoto, S. (author) / Nishio, N. (author) / Suzuki, T. (author) / Murakami, Y. (author) / Ohashi, H. (author) / Yamaguchi, H. (author) / Okumura, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.
Silicon Carbide and Related Materials 2009 ; 1139-1142
MATERIALS SCIENCE FORUM ; 645/648
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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