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    Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

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    New search for: Cha, S. Y.
    New search for: Choi, D. J.

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    Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

    New search for: Kim, H. J.
    New search for: Cha, S. Y.
    New search for: Choi, D. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

    New search for: Kim, H. J.
    New search for: Cha, S. Y.
    New search for: Choi, D. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

    Contributors:

    Kim, H. J. (author) / Cha, S. Y. (author) / Choi, D. J. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 9-12

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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