A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Han, Ping (author) / Lai, Tian-Cheng (author) / Wang, Mei (author) / Zhao, Xi-Rui (author) / Cao, Yan-Qiang (author) / Wu, Di (author) / Li, Ai-Dong (author)
Applied surface science ; 467 ; 423-427
2019-01-01
5 pages
Article (Journal)
English
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical and material characterization of tantalum pentoxide (Ta2O5) charge trapping layer memory
| British Library Online Contents | 2011
| British Library Online Contents | 2002
Nanostructuring and fluorescence properties of Eu3+:LiTaO3 in Li2O–Ta2O5–SiO2–Al2O3 glass-ceramics
| British Library Online Contents | 2009
Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks
| British Library Online Contents | 2018
Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks
| British Library Online Contents | 2018