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    Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics

    New search for: Pan, T. M.
    New search for: Huang, C. C.

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    Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics

    New search for: Pan, T. M.
    New search for: Huang, C. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics

    New search for: Pan, T. M.
    New search for: Huang, C. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics

    Contributors:

    Pan, T. M. (author) / Huang, C. C. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 256 ; 7186-7193

    Publication date:

    2010-01-01

    Size:

    8 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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