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    Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

    New search for: Cao, L.
    New search for: Pu, H.B.
    New search for: Chen, Z.M.
    New search for: Lin, T.
    New search for: Zhou, S.J.
    New search for: Huang, Y.M.

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    Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

    New search for: Cao, L.
    New search for: Pu, H.B.
    New search for: Chen, Z.M.
    New search for: Lin, T.
    New search for: Zhou, S.J.
    New search for: Huang, Y.M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

    New search for: Cao, L.
    New search for: Pu, H.B.
    New search for: Chen, Z.M.
    New search for: Lin, T.
    New search for: Zhou, S.J.
    New search for: Huang, Y.M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

    Contributors:

    Cao, L. (author) / Pu, H.B. (author) / Chen, Z.M. (author) / Lin, T. (author) / Zhou, S.J. (author) / Huang, Y.M.

    Published in:

    Optoelectronic Materials ; 494-497

    MATERIALS SCIENCE FORUM ; 663/665

    Publication date:

    2011-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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