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Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer
Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer
Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer
Cao, L. (Autor:in) / Pu, H.B. (Autor:in) / Chen, Z.M. (Autor:in) / Lin, T. (Autor:in) / Zhou, S.J. (Autor:in) / Huang, Y.M.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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