Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors: Fid-Bau Portal

Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

Park, Y. M. / Daniel, J. / Heeney, M. / Salleo, A.

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Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

Park, Y. M. / Daniel, J. / Heeney, M. / Salleo, A.

Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

Park, Y. M. / Daniel, J. / Heeney, M. / Salleo, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

Contributors:

Park, Y. M. (author) / Daniel, J. (author) / Heeney, M. (author) / Salleo, A. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 23 ; 971-974

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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