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Study of SiC and Si3N4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method
Study of SiC and Si3N4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method
Study of SiC and Si3N4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 231-238
2010-01-01
8 pages
Article (Journal)
English
DDC:
621.38152
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