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Annealing ambient on the evolution of He-induced voids in silicon
Annealing ambient on the evolution of He-induced voids in silicon
Annealing ambient on the evolution of He-induced voids in silicon
Li, B. S. (author) / Zhang, C. H. (author) / Zhong, Y. R. (author) / Wang, D. N. (author) / Zhou, L. H. (author) / Yang, Y. T. (author) / Zhang, L. Q. (author) / Zhang, H. H. (author) / Zhang, Y. (author) / Han, L. H. (author)
APPLIED SURFACE SCIENCE ; 257 ; 7036-7040
2011-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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