Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

Kwasnicki, P. / Jokubavicius, V. / Sun, J.W. et al. | British Library Online Contents | 2014

Properties of AlN Layers Grown by Sublimation Epitaxy

Beshkova, M. / Zakhariev, Z. / Birch, J. et al. | British Library Online Contents | 2003

Morphological Features of Sublimation-Grown 4H-SiC Layers

Schulz, D. / Doerschel, J. | British Library Online Contents | 2003

Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (0001) Carbon Faces

Stoemenos, J. / Di Cioccio, L. / Papaioannou, V. et al. | British Library Online Contents | 1998

Domain misorientation in sublimation grown 4H SiC epitaxial layers

Tuominen, M. / Yakimova, R. / Syvajarvi, M. et al. | British Library Online Contents | 1999