A platform for research: civil engineering, architecture and urbanism
Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
Kwasnicki, P. (author) / Jokubavicius, V. (author) / Sun, J.W. (author) / Peyre, H. (author) / Yakimova, R. (author) / Syvajarvi, M. (author) / Camassel, J. (author) / Juillaguet, S. (author) / Okumura, H. / Harima, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
British Library Online Contents | 2000
|Properties of AlN Layers Grown by Sublimation Epitaxy
British Library Online Contents | 2003
|Domain misorientation in sublimation grown 4H SiC epitaxial layers
British Library Online Contents | 1999
|Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation
British Library Online Contents | 1998
|Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
British Library Online Contents | 2011
|