Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers: Fid-Bau Portal

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Feng, G. / Suda, J. / Kimoto, T.

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Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Feng, G. / Suda, J. / Kimoto, T.

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Feng, G. / Suda, J. / Kimoto, T.

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Access via TIB

Check availability in my library

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Document information

Title:

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Contributors:

Feng, G. (author) / Suda, J. (author) / Kimoto, T. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 302-305

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers

Klein, P.B. / Caldwell, J.D. / Shrivastava, A. et al. | British Library Online Contents | 2009

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

Miyazawa, T. / Ito, M. / Tsuchida, H. | British Library Online Contents | 2011

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