Shallow Traps at P-Doped SiO~2/4H-SiC(0001) Interface: Fid-Bau Portal

Shallow Traps at P-Doped SiO~2/4H-SiC(0001) Interface

Okamoto, D. / Yano, H. / Kotake, S. / Hatayama, T. / Fuyuki, T.

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Shallow Traps at P-Doped SiO~2/4H-SiC(0001) Interface

Okamoto, D. / Yano, H. / Kotake, S. / Hatayama, T. / Fuyuki, T.

Shallow Traps at P-Doped SiO~2/4H-SiC(0001) Interface

Okamoto, D. / Yano, H. / Kotake, S. / Hatayama, T. / Fuyuki, T.

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Check availability in my library

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Document information

Title:

Shallow Traps at P-Doped SiO~2/4H-SiC(0001) Interface

Contributors:

Okamoto, D. (author) / Yano, H. (author) / Kotake, S. (author) / Hatayama, T. (author) / Fuyuki, T. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 338-341

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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