A Study of the Shallow Electron Traps at the 4H-SiC/SiO~2 Interface: Fid-Bau Portal

A Study of the Shallow Electron Traps at the 4H-SiC/SiO~2 Interface

Olafsson, H. O. / Sveinbjornsson, E. O. / Rudenko, T. E. / Kilchytska, V. I. / Tyagulski, I. P. / Osiyuk, I. N.

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A Study of the Shallow Electron Traps at the 4H-SiC/SiO~2 Interface

Olafsson, H. O. / Sveinbjornsson, E. O. / Rudenko, T. E. / Kilchytska, V. I. / Tyagulski, I. P. / Osiyuk, I. N.

A Study of the Shallow Electron Traps at the 4H-SiC/SiO~2 Interface

Olafsson, H. O. / Sveinbjornsson, E. O. / Rudenko, T. E. / Kilchytska, V. I. / Tyagulski, I. P. / Osiyuk, I. N.

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Title:

A Study of the Shallow Electron Traps at the 4H-SiC/SiO~2 Interface

Contributors:

Olafsson, H. O. (author) / Sveinbjornsson, E. O. (author) / Rudenko, T. E. (author) / Kilchytska, V. I. (author) / Tyagulski, I. P. (author) / Osiyuk, I. N. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 547-550

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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