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600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
Veliadis, V. (author) / Urciuoli, D. (author) / Ha, H.C. (author) / Hearne, H. (author) / Scozzie, C. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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