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600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
Veliadis, V. (Autor:in) / Urciuoli, D. (Autor:in) / Ha, H.C. (Autor:in) / Hearne, H. (Autor:in) / Scozzie, C. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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