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    4kV Silicon Carbide MOSFETs

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    4kV Silicon Carbide MOSFETs

    New search for: Stum, Z.
    New search for: Bolotnikov, A.V.
    New search for: Losee, P.A.
    New search for: Matocha, K.
    New search for: Arthur, S.
    New search for: Nasadoski, J.
    New search for: Rao, R.R.
    New search for: Saadeh, O.S.
    New search for: Stevanovic, L.
    New search for: Myers-Ward, R.L.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    4kV Silicon Carbide MOSFETs

    New search for: Stum, Z.
    New search for: Bolotnikov, A.V.
    New search for: Losee, P.A.
    New search for: Matocha, K.
    New search for: Arthur, S.
    New search for: Nasadoski, J.
    New search for: Rao, R.R.
    New search for: Saadeh, O.S.
    New search for: Stevanovic, L.
    New search for: Myers-Ward, R.L.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    4kV Silicon Carbide MOSFETs

    Contributors:

    Stum, Z. (author) / Bolotnikov, A.V. (author) / Losee, P.A. (author) / Matocha, K. (author) / Arthur, S. (author) / Nasadoski, J. (author) / Rao, R.R. (author) / Saadeh, O.S. (author) / Stevanovic, L. (author) / Myers-Ward, R.L. (author)

    Published in:

    Silicon Carbide and Related Materials 2010 ; 637-640

    MATERIALS SCIENCE FORUM ; 679/680

    Publication date:

    2011-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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