Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Naik, H. (Autor:in) / Chow, T.P. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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