Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique: Fid-Bau Portal

Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Chuah, S.K. / Cheong, K.Y. / Lockman, Z. / Hassan, Z.

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Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Chuah, S.K. / Cheong, K.Y. / Lockman, Z. / Hassan, Z.

Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Chuah, S.K. / Cheong, K.Y. / Lockman, Z. / Hassan, Z.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Contributors:

Chuah, S.K. (author) / Cheong, K.Y. (author) / Lockman, Z. (author) / Hassan, Z. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 101-107

Publication date:

2011-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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