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    Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation

    New search for: Meher, S. R.
    New search for: Biju, K. P.
    New search for: Jain, M. K.

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    Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation

    New search for: Meher, S. R.
    New search for: Biju, K. P.
    New search for: Jain, M. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation

    New search for: Meher, S. R.
    New search for: Biju, K. P.
    New search for: Jain, M. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation

    Contributors:

    Meher, S. R. (author) / Biju, K. P. (author) / Jain, M. K. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 258 ; 1744-1749

    Publication date:

    2011-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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