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    Composition-dependent structural, optical and electrical properties of In x Ga1−x N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation

    New search for: Meher, S. R.
    New search for: Subrahmanyam, A.
    New search for: Jain, M. K.

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    Composition-dependent structural, optical and electrical properties of In x Ga1−x N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation

    New search for: Meher, S. R.
    New search for: Subrahmanyam, A.
    New search for: Jain, M. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Composition-dependent structural, optical and electrical properties of In x Ga1−x N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation

    New search for: Meher, S. R.
    New search for: Subrahmanyam, A.
    New search for: Jain, M. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Composition-dependent structural, optical and electrical properties of In x Ga1−x N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation

    Contributors:

    Meher, S. R. (author) / Subrahmanyam, A. (author) / Jain, M. K. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 48 ; 1196-1204

    Publication date:

    2013-01-01

    Size:

    9 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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