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Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation
Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation
Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation
Meher, S. R. (Autor:in) / Biju, K. P. (Autor:in) / Jain, M. K. (Autor:in)
APPLIED SURFACE SCIENCE ; 258 ; 1744-1749
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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