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Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
Alam, E.A. (author) / Cortes, I. (author) / Begou, T. (author) / Goullet, A. (author) / Morancho, F. (author) / Cazarre, A. (author) / Regreny, P. (author) / Brault, J. (author) / Cordier, Y. (author) / Besland, M.P. (author)
2012-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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