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    Simulation of doping levels and deep levels in InGaN-based single-junction solar cell

    New search for: Lin, S.
    New search for: Zeng, S.
    New search for: Cai, X.
    New search for: Zhang, J.
    New search for: Wu, S.
    New search for: Sun, L.
    New search for: Zhang, B.

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    Simulation of doping levels and deep levels in InGaN-based single-junction solar cell

    New search for: Lin, S.
    New search for: Zeng, S.
    New search for: Cai, X.
    New search for: Zhang, J.
    New search for: Wu, S.
    New search for: Sun, L.
    New search for: Zhang, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Simulation of doping levels and deep levels in InGaN-based single-junction solar cell

    New search for: Lin, S.
    New search for: Zeng, S.
    New search for: Cai, X.
    New search for: Zhang, J.
    New search for: Wu, S.
    New search for: Sun, L.
    New search for: Zhang, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Simulation of doping levels and deep levels in InGaN-based single-junction solar cell

    Contributors:

    Lin, S. (author) / Zeng, S. (author) / Cai, X. (author) / Zhang, J. (author) / Wu, S. (author) / Sun, L. (author) / Zhang, B. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 47 ; 4595-4603

    Publication date:

    2012-01-01

    Size:

    9 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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