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Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels

Buniatyan, V. V. / Gasparyan, F. V. / Aroutiounian, V. V. / Soukiassian, P.

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Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels

Buniatyan, V. V. / Gasparyan, F. V. / Aroutiounian, V. V. / Soukiassian, P.

Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels

Buniatyan, V. V. / Gasparyan, F. V. / Aroutiounian, V. V. / Soukiassian, P.

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Check availability in my library

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Document information

Title:

Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels

Contributors:

Buniatyan, V. V. (author) / Gasparyan, F. V. (author) / Aroutiounian, V. V. (author) / Soukiassian, P. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 466-470

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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