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Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering
Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering
Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering
RARE METALS -BEIJING- ENGLISH EDITION ; 31 ; 193-197
2012-01-01
5 pages
Article (Journal)
English
DDC:
669
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