Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering: Fid-Bau Portal

Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering

Su, Y. / Dond, C. / Zhu, M. / Xu, J. / Fan, P.

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Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering

Su, Y. / Dond, C. / Zhu, M. / Xu, J. / Fan, P.

Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering

Su, Y. / Dond, C. / Zhu, M. / Xu, J. / Fan, P.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering

Contributors:

Su, Y. (author) / Dond, C. (author) / Zhu, M. (author) / Xu, J. (author) / Fan, P. (author)

Published in:

RARE METALS -BEIJING- ENGLISH EDITION ; 31 ; 193-197

Publication date:

2012-01-01

Size:

5 pages

ISSN:

1001-0521

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 669

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