Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures using Dicholorosilane and Silane Gases: Fid-Bau Portal

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures using Dicholorosilane and Silane Gases

Rana, T. / Song, H.Z. / Chandrashekhar, M.V.S. / Sudarshan, T.S.

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Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures using Dicholorosilane and Silane Gases

Rana, T. / Song, H.Z. / Chandrashekhar, M.V.S. / Sudarshan, T.S.

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures using Dicholorosilane and Silane Gases

Rana, T. / Song, H.Z. / Chandrashekhar, M.V.S. / Sudarshan, T.S.

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Document information

Title:

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures using Dicholorosilane and Silane Gases

Contributors:

Rana, T. (author) / Song, H.Z. (author) / Chandrashekhar, M.V.S. (author) / Sudarshan, T.S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 117-120

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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