Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane: Fid-Bau Portal

Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane

Jacob, C. / Hong, M.-H. / Chung, J. / Pirouz, P. / Nishino, S.

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Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane

Jacob, C. / Hong, M.-H. / Chung, J. / Pirouz, P. / Nishino, S.

Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane

Jacob, C. / Hong, M.-H. / Chung, J. / Pirouz, P. / Nishino, S.

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Document information

Title:

Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane

Contributors:

Jacob, C. (author) / Hong, M.-H. (author) / Chung, J. (author) / Pirouz, P. (author) / Nishino, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 249-252

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Jacob, C. / Pirouz, P. / Nishino, S. | British Library Online Contents | 2001

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