A platform for research: civil engineering, architecture and urbanism
Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
Kotamraju, S. (author) / Krishnan, B. (author) / Beyer, F.C. (author) / Henry, A. (author) / Kordina, O. (author) / Janzen, E. (author) / Koshka, Y. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 129-132
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical and Optical Properties of Highly Strained GaN Epilayers
British Library Online Contents | 1998
|In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
British Library Online Contents | 2010
|As-Grown 4H-SiC Epilayers with Magnetic Properties
British Library Online Contents | 2004
|Growth and Electrical Characterization of 4H-SiC Epilayers
British Library Online Contents | 2007
|Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
British Library Online Contents | 2010
|