Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers: Fid-Bau Portal

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

Hassan, J. / Henry, A. / Bergman, J.P.

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Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

Hassan, J. / Henry, A. / Bergman, J.P.

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

Hassan, J. / Henry, A. / Bergman, J.P.

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Title:

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

Contributors:

Hassan, J. (author) / Henry, A. (author) / Bergman, J.P. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.

Published in:

Silicon Carbide and Related Materials 2009 ; 307-310

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Hassan, J. / Bergman, J.P. | British Library Online Contents | 2010

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Okojie, R. S. / Zhang, M. / Pirouz, P. | British Library Online Contents | 2004

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

Sun, J.W. / Robert, T. / Jokubavicius, V. et al. | British Library Online Contents | 2012

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Kamata, I. / Tsuchida, H. / Miyanagi, T. et al. | British Library Online Contents | 2006