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Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Krishnan, B. / Thirumalai, R.V.K.G. / Kotamraju, S. / Merrett, J.N. / Koshka, Y.

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Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Krishnan, B. / Thirumalai, R.V.K.G. / Kotamraju, S. / Merrett, J.N. / Koshka, Y.

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Krishnan, B. / Thirumalai, R.V.K.G. / Kotamraju, S. / Merrett, J.N. / Koshka, Y.

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Title:

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Contributors:

Krishnan, B. (author) / Thirumalai, R.V.K.G. (author) / Kotamraju, S. (author) / Merrett, J.N. (author) / Koshka, Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 133-136

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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